Tuesday, September 12, 2006
Samsung Announces Next-Generation Non-Volatile Memory (PRAM)
Posted by Darius Wey in "NEWS" @ 06:00 PM
"Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology solutions, announced that it has completed the first working prototype of what is expected to be the main memory device to replace high density NOR flash within the next decade – a Phase-change Random Access Memory (PRAM). The company unveiled the 512M-Megabit (Mb) device at its sixth annual press conference in Seoul today."
I totally dig this. In 2008, the fast processing speeds of RAM (since previous data no longer needs to be erased when writing new data) and the non-volatility of ROM will combine to create PRAM: perfect RAM. It's expected to have at least ten times the life span of standard flash memory. For those of you still not wanting to upgrade to Windows Mobile 5.0 and beyond because of the ROM performance hit, this could be your ticket. ;)
I totally dig this. In 2008, the fast processing speeds of RAM (since previous data no longer needs to be erased when writing new data) and the non-volatility of ROM will combine to create PRAM: perfect RAM. It's expected to have at least ten times the life span of standard flash memory. For those of you still not wanting to upgrade to Windows Mobile 5.0 and beyond because of the ROM performance hit, this could be your ticket. ;)
